文旅融合下的京津冀校园文化衍生品设计研究

探析如何让京津冀地区独特的校园文化衍生品得到创新性发展，让文创产品更容易达到共情的目的，并传递不同的校园文化价值，围绕校园文化衍生品进行创新性设计。基于对京津冀地区不同校园文化背景的调研，在文旅融合背景下分析校园文化产品的现状与发展，以及有代表性的校园文化品牌。以清华大学文创产品为例，设计出具有创新性的校园文化产品，将文化元素与产品设计相结合。运用校园特色建筑、色彩、文化背景，发挥其原创性、传播性、文化性等优势，传播学校的理念及文化，扩大校园文化传播途径。在文旅融合背景下，设计出独特的校园文化衍生产品，传承文化内涵与理念，并提高校园文化认同感与归属感，成为京津冀地区发展校园文化的趋势，从而推动文化旅游产业的发展。     

A directional control method for interface flow considering static voltage stability

A directional control method (DCM) for power flows on a set of interface lines between two regions of power system considering static voltage stability margin is developed in this paper. A surface approximation approach is firstly used to obtain the relationship between the interface flow solution and the generation direction of generator (the portion of generation variation in each participating generator to satisfy the desired power increase on the interface and the system loss). Then, an optimization model is built to determine the optimum dispatching scheme of generators. This method not only can control the total power on the interface to satisfy the power demand but also can realize the directional control of power on each interface line based on the needs of operation. The proposed DCM is further extended to determine the optimum dispatching scheme of generators for maximizing the interface flow margin (IFM), which is the active power margin of the key transmission lines between two regions of power system constrained by static voltage stability. A modified continuation power flow (MCPF) is used to show and evaluate the impacts of the DCM on the IFM. The New England 39-bus system and the IEEE 300-bus system have been employed to verify the effectiveness of the DCM.     

叠前深度偏移技术在白秋地区应用效果分析

白秋地区位于南阳凹陷东南部,构造背景是一个被后期北东向断层切割复杂化了的鼻状构造,该区地下构造复杂,断层发育,地层被多期断层交汇切割,同时埋深又比较大,使得常规地震处理不能对该地区地层准确成像。叠前深度偏移技术在白秋地区的应用,提高了区内地层的成像精度,精细刻画了较小的断层断块,满足了地质人员的解释需求。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

Calculation of the Characteristics of Salient‐Pole Synchronous Machines Assisted by Permanent Magnets on the Basis of the Operating Principle

In this study we investigate a method for accurately calculating the characteristics of salient‐pole synchronous machines assisted by permanent magnets. First, the operating principle of the machines is investigated by using both finite element analysis and a simple magnetic circuit. Then, a theoretical representation of the assist effect on the permanent magnets is derived based on the magnetic circuit. Finally, the measured and calculated results are compared in order to confirm the validity of the proposed calculation method. We show that the load characteristics of the proposed machine can be accurately estimated from the no‐load and short‐circuit characteristics of the conventional machine without permanent magnets, and the size and magnetization of the inserted permanent magnets.     

带权决策表的属性约简

属性约简是粗糙集理论的重要应用。考虑将决策表中的每行都作为一条决策规则时，若把表中出现相同决策规则的次数作为权，可得到带权决策表。提出了关于带权决策表的正域约简相应的辨识矩阵并给出了证明，从而得到了约简算法。相比于决策表中的正域约简时发现，通过将决策表转化为带权决策表后，再利用算法1进行约简时，其在一定程度上优于前者。提出了近似分类精度约简相应的辨识矩阵并给出了证明。对于2个算法，在选取的UCI数据集上进行了实验验证。通过实验进一步说明了所提出算法的可行性和有效性。     

miR-181b promotes the oncogenesis of renal cell carcinoma by targeting TIMP3

Renal cell carcinoma (RCC) has a poor prognosis due to limited diagnosis and treatment. Thus, it is necessary to find novel prognostic biomarkers and therapeutic targets. The aberrant expression of microRNAs plays an important role in RCC oncogenesis. Tissue inhibitors of metalloproteinase 3 (TIMP3) acts as a downstream target of miR-181b. The aim of this study was to understand the role and molecular mechanism of miR-181b in RCC oncogenesis. The results showed that miR-181b expression was significantly higher in RCC tumour tissues, especially in those with significant invasion or metastasis. miR-181b overexpression promoted proliferation and migration of the RCC cell line 786-O, while miR-181b knockdown had the opposite effect. In addition, miR-181b was inversely correlated with TIMP3 expression in RCC tumour tissues. miR-181b overexpression reduced TIMP3 expression in RCC cell line 786-O or OS-RC-2, while miR-181b knockdown had the inverse effect. Mechanistically, a luciferase reporter assay confirmed the binding sites of miR-181b on the 3’-UTR of TIMP3, confirming the targeting effect of miR-181b on TIMP3. Overall, miR-181b promotes the development and progression of RCC by targeting TIMP3 expression, indicating the potential use of miR-181b in the diagnosis and treatment of RCC.